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MGSF1P02
Power MOSFET P-Channel
3 DRAIN
SOT-23
Features:
*Low On-Resistance : 0.35 *Low Input Capacitance: 130 PF *Low Out put Capacitance : 120 PF *Low Threshole : 1.7V(TYE) *Fast Switching Speed : 2.5ns
1 GATE 2
SOURCE
3 1 2
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) _ Pulsed Drain Current(1) (t p<10us) Power Dissipation (TA=25 C) Thermal Resistance Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDSS VGS ID IDM PD R JA TJ, Tstg Value 20 20 750 2000 400 300 -55 to 150 Unit V V mA mA mW C/W C
Device Marking
MGSF1P02=PC Note 1: Pulse Width Limited by Maximum Junction Temperature
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MGSF1P02
Electrical Characteristics
Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=VGS , ID=250 uA Gate-body Leakage Current _ VGS= + 20V, VDS=0V Zero Gate Voltage Drain Current VDS=20V, VGS=0V VDS=20V, VGS=0V, Tj=125 C Static Drain-to-Source On-Resistance VGS=10V, ID=1.5A VGS=4.5V, ID=0.75A V(BR)DSS VGS (th) IGSS IDSS 20 1.0 1.7 2.4 +100 _ 1.0 10 V V nA uA
-
-
rDS (on)
0.235 0.375
0.350 0.500
Ohms
Dynamic Characteristics
Input Capacitance VDS=5.0V Output Capacitance VDS=5.0V Transfer Capacitance(See FIG.6) VDG=5.0V Ciss Coss Crss
-
130 120 60
PF
Switching Characteristics(2)
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDD =15V, ID =1.0A, R L=5 0) , td(on) tr td(off ) tf QT
-
2.5 1.0 16 8.0 6000
pC nS
Source-Drain Diode Characteristics
Continuous Current Pulsed Current Forward Voltage (2) IS I SM VSD
-
1.5
0.6 0.75 -
A
V
Note:
_ _ 1. Pulse Test: Pulse Width < 300us, Duty Cycle < 2%. 2. Switching characteristics are independent of operating junction temperature.
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MGSF1P02
1.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) ID , DRAIN CURRENT (AMPS) 1.25 1 0.75 0.5 0.25 0 -55 C TJ = 150 C 1.25 1 3.0 V 1.5 VGS = 3.5 V 3.25 V
0.75 0.5 2.75 V 2.5 V 2.25 V
25 C
0.25 0
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
9
10
VGS , GATE-T O-SOURCE VOLTAGE (VOLTS)
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIG.1 Transfer Characteristics
R DS(on) , DRAIN-TO-SOURCE RESIST ANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESIST ANCE (OHMS) 0.55 0.4 0.38 0.36 0.34 0.32 0.3 0.28 0.26 0.24 0.22 0.2 0
FIG.2 On-Region Characteristics
0.5
150 C VGS = 4.5 V
VGS = 10 V 150 C
0.45 25 C 0.4 -55 C 0.35 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
25 C -55 C
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
ID , DRAIN CURRENT (AMPS)
ID , DRAIN CURRENT (AMPS)
FIG.3 On-Resistance versus Drain Current
FIG.4 On-Resistance versus Drain Current
R DS(on) , DRAIN-TO-SOURCE RESIST ANCE (NORMALIZED)
VGS , GATE-T O-SOURCE VOLTAGE (VOLTS)
1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 - 55 -5 45 95 145 VGS = 4.5 V ID = .75 A VGS = 10 V ID = 1.5 A
10 8 6
VDS = 16 V TJ = 25 C
4 ID = 1.5 A 2 0
0
1000
2000
3000
4000
5000
6000
TJ , JUNCTION TEMPERATURE ( C)
QT , TOTAL GATE CHARGE (pC)
FIG.5 On-Resistance Variation with Temperature
FIG.6 Gate Charge
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MGSF1P02
1 I D , DIODE CURRENT (AMPS) 1000 VGS = 0 V f = 1 MHz TJ = 25 C Ciss 100 Coss Crss
0.1
-55 C
0.01
C , CAPACITANCE (pF)
TJ = 150 C
25 C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
10
0
2
4
6
8
10
VSD , DIODE FORWARD VOL TAGE (VOLTS)
VDS , DRAIN-TO-SOURCE VOLTAGE (Volts)
FIG.7 Body Diode Forward Voltage
FIG.8 Capacitance
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MGSF1P02
SOT-23 Package Outline Dimensions
Unit:mm
A
T OP V IE W
B
C
E
G H
D
K J L M
Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25
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